IRFB7430PBF,MOSFET,40V195A,Infineon,现货,价格,中文参数,规格书

IRFB7430PBF是一款由Infineon Technologies生产的功率场效应管（MOSFET）。以下是关于这款产品的详细介绍，包括品牌、参数、功能、价格和应用等方面的信息。

Download  Data Sheet EN 

#:942-IRFB7430PBF
Mfr. #:
IRFB7430PBF
Mfr.:Infineon Technologies
Customer #:
Customer #
Description:
MOSFET 40V 1.3mOhm 195A HEXFET 375W 300nC
Lifecycle: NRND: Not recommended for new designs.
Datasheet:
 IRFB7430PBF Datasheet (PDF)
ECAD Model:Build or request PCB Symbol, Footprint or Model for IRFB7430PBFDownload the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.
More InformationLearn more about Infineon Technologies IRFB7430PBF
 Compare ProductAdd To Project | Add Notes
In Stock: 4,499
Stock:
4,499 Can Ship Immediately
Factory Lead-Time:
12 Weeks Estimated factory production time for quantities greater than shown.
 
Minimum: 1   Multiples: 1
Enter Quantity:
Pricing (USD)
Qty. Unit Price
Ext. Price
$2.52 $2.52
$2.41 $24.10
$1.93 $48.25
$1.80 $180.00
$1.68 $420.00
$1.61 $805.00
$1.45 $1,450.00
$1.44 $2,880.00
$1.40 $7,000.00
FEATURED PRODUCTS
INFINEON

CoolSiC™ 650V G2 MOSFETs
Leverage silicon carbide's performance capabilities by enabling lower energy loss.
Learn More

CoolSiC™ 750V G1 MOSFETs
Excel in performance, reliability, and robustness.
Learn More

CoolSiC™ 1200V G2 MOSFETs
High-performance solution for power electronics applications.
Learn More

CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs
Helps EV makers create 11kW and 22kW bidirectional onboard chargers.
Learn More

CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs
Offers best-in-class switching performance and features robustness against parasitic turn-ons.
Learn More
Specifications
Product Attribute Attribute Value Select Attribute
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 409 A
Rds On - Drain-Source Resistance: 1.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 460 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 375 W
Channel Mode: Enhancement
Tradename: StrongIRFET
Packaging: Tube
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
1000
Subcategory: MOSFETs
Width: 4.4 mm
Unit Weight: 0.068784 oz

40V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

特征描述

High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Industry standard through-hole power package
Wide portfolio available
优势

High-current carrying capability package
Industry standard qualification level
High performance in low frequency applications
Increased power density
Standard pinout allows for drop in replacement
Provides designers flexibility in selecting the most optimal device for their application
潜在应用

Battery management systems

Power tools

DC Drives

Electric toys

应用领域
离线 UPS —— 高频变压器
燃料电池控制单元
用到这个产品的工程师在他们的设计工作中还用到了
IRS10752LIRS10752L  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS21271SIRS21271S  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS4427SIRS4427S  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRLB4132IRLB4132  |  
N-通道功率MOSFET
IRFB7437IRFB7437  |  
N-通道功率MOSFET
1ED44173N01B1ED44173N01B  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
1EDI60N12AF1EDI60N12AF  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
2ED24427N01F2ED24427N01F  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
6ED2742S01Q6ED2742S01Q  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS10752LIRS10752L  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS21271SIRS21271S  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS4427SIRS4427S  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRLB4132IRLB4132  |  
N-通道功率MOSFET
IRFB7437IRFB7437  |  
N-通道功率MOSFET
1ED44173N01B1ED44173N01B  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
1EDI60N12AF1EDI60N12AF  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
2ED24427N01F2ED24427N01F  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
6ED2742S01Q6ED2742S01Q  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
IRS10752LIRS10752L  |  
栅极驱动器IC-驱动芯片-英飞凌(Infineon)官网
1
2
Download  Data Sheet
 EN 
Share
01_01 | 2012-05-04 | pdf | 259 KB



指标参数
Parametrics IRFB7430
Budgetary Price €/1k 1.56 
ID (@25°C)   max 195 A
Mounting THT
Operating Temperature   min  max -55 °C   175 °C
Ptot   max 375 W
Package TO-220
Polarity N
QG (typ @10V) 300 nC
Qgd 98 nC
RDS (on) (@10V)   max 1.3 mΩ
RthJC   max 0.4 K/W
Tj   max 175 °C
VDS   max 40 V
VGS(th)   min  max 3.05 V   2.2 V   3.9 V
VGS   max 20 V

商品全部为进口原厂原装正品现货，全部为原厂官网或代理商货源，请放心购买。深圳原装现货，18:00前下单付款当日可发货。新批次期货订货中，如需了解其他现货,价格,中文参数,中文资料,规格书,数据手册,引脚图,原理图,参考设计,货期,批号,封装,产品丝印等信息,请联系客服。其他未列出产品也可订货。

Hot in stock, ships within 24 hours！New and Original,New batch of futures in order, for other products, price, parameters, specifications, pin diagrams, schematic diagrams, reference design, datasheet,price,pinout,datecode, lot number, package information,device Marking,please contact customer service. Other products not listed can also be ordered.

Contact： LEO LEE
CELL：+86-13172478666
WECHAT：13172478666
TEL：+86-755-33178666
EMAIL：cn50#compel.com.cn
QQ:910193036